ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The Renesas 2SK3433-ZJ-E1-AZ is an N-channel power MOSFET designed for high-current switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 40A at case temperature. The device exhibits a super low on-state resistance (RDS(on)) of 26mΩ, ensuring efficient power handling with minimal conduction losses. Packaged in a TO-263 surface-mount format, it supports thermal management requirements for industrial and automotive environments.
Feature Summary
- Super low on-state resistance for high efficiency
- Designed for high-current switching applications
- Surface-mount TO-263 package for PCB integration
Applications
- High-current DC-DC converters
- Motor control circuits
- Power supply output stages
Procurement Notes
Verify the specific suffix -ZJ-E1-AZ to confirm lead-free status and RoHS compliance. Ensure the TO-263 footprint matches your PCB layout design. Confirm that the 60V rating meets your circuit's peak voltage requirements. Check thermal dissipation capabilities against your application's ambient temperature conditions.
Selection Notes
Select this component when low RDS(on) is critical for minimizing heat generation in high-current paths. The 60V rating suits low-voltage systems. Consider the TO-263 package for its balance of current capacity and board space. Evaluate thermal resistance parameters if operating near the 40A limit.
Part Context
This part belongs to Renesas' discrete power MOSFET portfolio, formerly associated with NEC Electronics. It serves as a standard solution for general-purpose power switching where efficiency and current handling are prioritized over ultra-high voltage ratings.
Replacement Considerations
Check for direct cross-references from other manufacturers offering 60V, 40A N-channel MOSFETs in TO-263 packages with similar RDS(on). Verify pinout compatibility before substitution.
