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Product Detailed Parameters
- Description：2SK3435-AZ - SWITCHING N-CHANNEL
- Series：-
- Mfr：Renesas
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3200 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta), 84W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The Renesas 2SK3435-AZ is a silicon N-channel power MOSFET designed for high-current switching applications. It features an 80A continuous drain current (ID) and a 60V drain-source breakdown voltage (BV_DSS). The device exhibits a maximum on-resistance (R_DS(on)) of 0.022 ohms, ensuring low conduction losses. Packaged in a TO-220AB flange mount configuration with three pins, it integrates a built-in diode. The component operates in enhancement mode and is rated for an avalanche energy capacity of 96 mJ.
Feature Summary
- High current handling capability suitable for robust power switching
- Low on-state resistance for efficient power management
- Integrated protection via built-in diode structure
- Robust thermal dissipation through flange mount packaging
Applications
- Industrial motor control systems
- Power supply unit output stages
- DC-DC converter circuits
Procurement Notes
Verify the specific suffix 'AZ' against official manufacturer documentation to confirm exact binning or testing criteria. Confirm RoHS compliance status as historical data indicates non-compliance for standard variants. Ensure the TO-220AB package dimensions match your PCB footprint requirements before finalizing procurement.
Selection Notes
Select this component when a 60V rating and 80A current capacity are required in a single-chip solution. The low R_DS(on) makes it suitable for efficiency-critical designs. Consider the TO-220AB package for applications requiring direct heatsink mounting. Verify that the built-in diode meets the circuit's reverse recovery requirements.
Part Context
This part belongs to the NEC (now Renesas) discrete semiconductor transistor portfolio. It is classified as a Power Field-Effect Transistor utilizing Metal-Oxide Semiconductor technology. The product line targets general-purpose power switching needs within industrial and consumer electronics sectors.
Replacement Considerations
Consult official substitution guides for equivalent N-channel MOSFETs with matching 60V/80A ratings and TO-220AB packages. Verify pinout compatibility and thermal characteristics before replacing.
