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Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The Renesas Electronics 2SK3435-Z-E1-AZ is an N-channel power MOSFET designed for high current switching applications. It features a TO-220AB package with a maximum drain-source voltage of 60 V and a continuous drain current of 80 A at 25°C case temperature. The device exhibits super low on-state resistance, specified as 14 mΩ maximum at VGS = 10 V and 22 mΩ maximum at VGS = 4.0 V, both measured at ID = 40 A. It includes a built-in gate protection diode and has a total power dissipation rating of 84 W at 25°C case temperature.
Feature Summary
- Super low on-state resistance for efficient power handling
- Built-in gate protection diode for enhanced reliability
- Low input capacitance for fast switching performance
Applications
- High current switching applications
- Power supply circuits
- Motor control systems
Procurement Notes
Verify the specific ordering suffix matches the required package variant, as the datasheet lists multiple packages including TO-220AB, TO-262, TO-263, and TO-220SMD. Confirm that the component meets the intended quality grade requirements, noting that standard grades are suitable for general industrial use but specific grades require prior consent. Ensure compliance with RoHS directives if applicable to the target market.
Selection Notes
Select this component for designs requiring robust N-channel switching capabilities with integrated gate protection. Consider the thermal management requirements given the 84 W dissipation rating at 25°C case temperature. Evaluate the gate drive voltage levels against the specified RDS(on) conditions to ensure optimal conduction losses. Verify that the 60 V breakdown voltage aligns with the system's operating voltage margins.
Part Context
This part belongs to the NEC/Renesas power MOSFET lineup, originally documented under NEC Electronics before the merger. The 2SK3435 series offers various package options to suit different mounting needs, ranging from through-hole TO-220AB to surface-mount variants. It is engineered for durability in demanding electronic environments.
Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage and current ratings. Verify that any substitute maintains similar on-state resistance and switching characteristics to ensure circuit performance parity.
