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Product Detailed Parameters
- Description：MOSFET N-CH 100V 36A TO251
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：36A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：33mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3600 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 50W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
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Overview
The 2SK3482-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 36 A at ambient temperature. The device has a maximum gate-source voltage (Vgs) of ±20 V and a gate charge (Qg) of 72 nC at 10 V. Its on-resistance (Rds(on)) is 33 mΩ at 10 V with 18 A current. Input capacitance (Ciss) is 3600 pF at 10 V. Power dissipation is rated at 1 W at Ta and 50 W at Tc. It operates up to 150°C junction temperature and uses a TO-251 package.
Feature Summary
- N-channel silicon MOSFET technology for high-current switching applications
- Low on-state resistance optimized for efficient power conduction
- Robust thermal performance supporting significant power dissipation in surface-mount configurations
Applications
- General-purpose power switching circuits
- DC-DC converter output stages
- Motor control driver interfaces
Procurement Notes
Verify component authenticity through authorized Renesas distributors or certified partners. Confirm RoHS3 compliance status as indicated in official documentation. Check part status carefully, as this specific variant may be discontinued; ensure availability aligns with long-term production requirements before finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring 100 V blocking capability and moderate current handling around 36 A. Consider the TO-251 package constraints for thermal management and PCB layout. Evaluate gate drive requirements against the 72 nC charge specification to ensure adequate switching speed without excessive driver loss.
Part Context
This device belongs to the Renesas 2SK series of power MOSFETs, designed for general-purpose electronic applications. The manufacturer specializes in embedded solutions and discrete semiconductors. This specific part represents a standard N-channel enhancement mode transistor within their broader portfolio of power management components.
Replacement Considerations
Consult official Renesas documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative devices in existing designs.
