2SK3483(0)-Z-E1-AZ

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:0d2ffb1b9f02 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：28A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3483(0)-Z-E1-AZ

Overview

The Renesas Electronics 2SK3483 is an N-channel power MOSFET designed for high current switching applications. It features a low on-state resistance of 52 mΩ maximum at VGS = 10 V and ID = 14 A, and 59 mΩ maximum at VGS = 4.5 V and ID = 14 A. The device supports a drain-to-source voltage (V_DSS) of 100 V and a continuous DC drain current (I_D(DC)) of ±28 A. It includes a built-in gate protection diode and is available in TO-251 or TO-252 packages.

Feature Summary

Low on-state resistance for efficient power handling
Built-in gate protection diode for enhanced reliability
Optimized for high current switching applications

Applications

High current switching circuits
Power management systems
Industrial motor control

Procurement Notes

Verify the specific package variant required, as the base part number corresponds to the TO-251 package while the suffix -Z indicates the TO-252 package. Confirm that the component meets the intended quality grade requirements for your application before procurement. Ensure compliance with all specified absolute maximum ratings during operation.

Selection Notes

Select this component based on its 100 V drain-to-source voltage rating and 28 A continuous current capability. Consider the thermal dissipation characteristics and the need for adequate heat sinking given the total power dissipation limits. Evaluate the switching speed parameters against the requirements of the target circuit frequency.

Part Context

This component belongs to the family of N-channel power MOSFETs manufactured by Renesas Electronics. It is engineered to provide robust performance in demanding electronic environments where high current switching and low conduction losses are critical design factors.