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Product Detailed Parameters
- Description：MOSFET N-CH 50V 100MA SMINI3-G1
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
- Rds On (Max) @ Id, Vgs：15Ohm @ 10mA, 2.5V
- Vgs(th) (Max) @ Id：1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±7V
- Input Capacitance (Ciss) (Max) @ Vds：12 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SMini3-G1
- Package / Case：SC-70, SOT-323
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Overview
The Panasonic 2SK3539 is a silicon N-channel MOSFET designed for switching applications. It features a built-in gate protection diode and operates within a drain-source voltage of 50 V and a continuous drain current of 100 mA. The device utilizes an SMini3-G1 (EIAJ: SC-70) package, measuring approximately 1.3 mm by 2.1 mm. Key electrical characteristics include a maximum drain-source on-resistance of 15 Ω at VGS = 2.5 V and a forward transfer admittance ranging from 20 to 60 mS. Turn-on and turn-off times are specified at 200 ns under standard test conditions.
Feature Summary
- High-speed switching capability with wide frequency band operation
- Integrated gate protection diode for enhanced circuit reliability
- Compact surface-mount packaging suitable for space-constrained designs
Applications
- General electronic equipment
- Office equipment
- Communications equipment
- Measuring instruments
- Household appliances
Procurement Notes
Verify the current lifecycle status directly through official Panasonic channels before procurement. The datasheet indicates this component falls under maintenance or discontinued categories. Confirm availability and lead times with authorized distributors. Ensure that the latest product standards match your design requirements prior to finalizing orders.
Selection Notes
Select this component for low-voltage switching tasks requiring compact form factors. The 50 V rating and 100 mA current limit define its operational boundaries. Consider the 15 Ω on-resistance for power dissipation calculations in load circuits. Verify compatibility with control logic levels, as threshold voltages vary between 0.9 V and 1.5 V.
Part Context
This part belongs to the Panasonic small signal silicon MOSFET family. It is engineered for general-purpose switching rather than high-power amplification. The SC-70 package allows for automated surface-mount assembly. It serves as a standard discrete transistor solution for consumer and industrial electronics.
Replacement Considerations
Consult official Panasonic documentation for confirmed substitute part numbers. Cross-referencing requires matching voltage, current, and package specifications. Verify pinout compatibility if replacing in existing layouts.
FAQ
What is the purpose of the built-in gate protection diode?
The integrated gate protection diode safeguards the gate terminal against voltage spikes and electrostatic discharge, enhancing device reliability during switching operations.
How does temperature affect the drain-source on-resistance?
The drain-source on-resistance increases as the ambient temperature rises. Designers must account for this thermal coefficient when calculating power dissipation at elevated operating temperatures.
