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Product Detailed Parameters
- Description：MOSFET N-CH 900V 5A TO220SIS
- Series：π-MOSIV
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.5Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220SIS
- Package / Case：TO-220-3 Full Pack
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Overview
The Toshiba 2SK3565(Q,M) is a silicon N-channel MOSFET utilizing the π-MOSIV structure. It features a drain-source on-resistance of 2.0 Ω and a forward transfer admittance of 4.5 S. The device supports a maximum drain-source voltage of 720 V with a leakage current of 100 μA at that voltage. Gate threshold voltage ranges from 2.0 to 4.0 V. Designed for switching regulator applications, it offers high-speed switching capabilities and low drive loss characteristics.
Feature Summary
- Utilizes π-MOSIV double-diffusion structure for high-withstand voltage
- Features low drain-source on-resistance for reduced power consumption
- Provides high forward transfer admittance for efficient switching performance
- Supports easy parallel connection due to voltage-controlled operation
Applications
- Switching regulator circuits
- AC adapter power supplies
- Motor driver systems
Procurement Notes
Verify the specific ordering suffix (Q or M) against the manufacturer's official documentation to confirm package type and tape-and-reel specifications. Ensure the component matches the required π-MOSIV generation and absolute maximum ratings for your circuit design before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high-voltage handling up to 720 V combined with moderate current switching capabilities. The π-MOSIV technology provides a balance between low on-resistance and fast switching speeds suitable for standard frequency regulators. Consider thermal management requirements based on the selected package option.
Part Context
This part belongs to Toshiba's π-MOS series, which employs a double-diffusion MOS structure optimized for high-withstand voltage and high-current devices. The π-MOSIV variant specifically enhances integration levels to achieve lower ON-resistance and improved power loss performance compared to earlier generations in the portfolio.
Replacement Considerations
Consult official cross-reference lists for verified substitutes such as the 2SK3564 or 2SK3566. Verify pinout compatibility and electrical parameter alignment before implementing any alternative components in existing designs.
