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The Toshiba 2SK3566 is an N-channel Power MOSFET belonging to the π-MOSIV series, utilizing a double-diffusion MOS structure. It features a drain-source voltage rating of 60 V and a continuous drain current capacity of 4.6 A. The device exhibits a maximum on-resistance of 0.17 ohms. Key electrical characteristics include a gate threshold voltage range of 1.5 V to 3.5 V and a total gate charge of 8 nC. The component is housed in a TO-220SM(W) package, designed for high current-carrying capability with copper connectors.
Verify the specific ordering suffix (STA4, Q, M) against official Toshiba documentation to confirm exact packaging and tape-and-reel specifications. Ensure the part number matches the π-MOSIV series designation and TO-220SM(W) package type. Cross-reference absolute maximum ratings with system requirements before procurement.
Select this component for applications requiring 60 V breakdown and moderate current handling up to 4.6 A. The low gate charge supports efficient driving in switching circuits. Consider the TO-220SM(W) package for through-hole mounting where high current density and thermal dissipation are critical. Verify compatibility with drive voltages given the specified gate threshold range.
This device is part of Toshiba's π-MOSIV series, which employs a double-diffusion MOS structure optimized for high-withstand voltage and high-current applications. The series is characterized by low ON-resistance and improved switching speed compared to earlier generations. It serves as a power switch solution for industrial and consumer electronics requiring reliable performance under moderate voltage stress.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba technical support or authorized distributors for verified cross-reference data.