2SK3566(STA4,Q,M)

2SK3566(STA4,Q,M)

$1.82
  • Description:MOSFET N-CH 900V 2.5A TO220SIS
  • Series:π-MOSIV
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube

SKU:494f5da9f54d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 900V 2.5A TO220SIS
  • Series:π-MOSIV
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):900 V
  • Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:6.4Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):40W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220SIS
  • Package / Case:TO-220-3 Full Pack

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2SK3566(STA4,Q,M)

Overview

The Toshiba 2SK3566 is an N-channel Power MOSFET belonging to the π-MOSIV series, utilizing a double-diffusion MOS structure. It features a drain-source voltage rating of 60 V and a continuous drain current capacity of 4.6 A. The device exhibits a maximum on-resistance of 0.17 ohms. Key electrical characteristics include a gate threshold voltage range of 1.5 V to 3.5 V and a total gate charge of 8 nC. The component is housed in a TO-220SM(W) package, designed for high current-carrying capability with copper connectors.

Feature Summary

  • Utilizes π-MOSIV double-diffusion MOS structure for high withstand voltage and low ON-resistance.
  • Features rugged construction with no carrier storage effect for superior switching characteristics.
  • Incorporates TO-220SM(W) package with copper connectors for enhanced thermal performance.
  • Offers guaranteed avalanche capability to simplify absorber circuit design.

Applications

  • Motor drivers
  • Solenoid drivers
  • Lamp drivers

Procurement Notes

Verify the specific ordering suffix (STA4, Q, M) against official Toshiba documentation to confirm exact packaging and tape-and-reel specifications. Ensure the part number matches the π-MOSIV series designation and TO-220SM(W) package type. Cross-reference absolute maximum ratings with system requirements before procurement.

Selection Notes

Select this component for applications requiring 60 V breakdown and moderate current handling up to 4.6 A. The low gate charge supports efficient driving in switching circuits. Consider the TO-220SM(W) package for through-hole mounting where high current density and thermal dissipation are critical. Verify compatibility with drive voltages given the specified gate threshold range.

Part Context

This device is part of Toshiba's π-MOSIV series, which employs a double-diffusion MOS structure optimized for high-withstand voltage and high-current applications. The series is characterized by low ON-resistance and improved switching speed compared to earlier generations. It serves as a power switch solution for industrial and consumer electronics requiring reliable performance under moderate voltage stress.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba technical support or authorized distributors for verified cross-reference data.

2SK3566(STA4,Q,M)2SK3566(STA4,Q,M)
$1.82
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