2SK3570-ZK-E1-AZ

2SK3570-ZK-E1-AZ

$1.02
  • Description:POWER FIELD-EFFECT TRANSISTOR
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk

SKU:b0c10fd1a99c Category: Brand:

  
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Product Detailed Parameters

  • Description:POWER FIELD-EFFECT TRANSISTOR
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SK3570-ZK-E1-AZ

Overview

The 2SK3570-ZK-E1-AZ is an N-channel Power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source breakdown voltage of 20V and a continuous drain current of 48A. The device exhibits a maximum on-state resistance of 0.012 ohms at VGS=10V and ID=24A, with a typical gate charge of 23nC. Designed for low-voltage high-current applications, it supports 4.5V drive levels and utilizes a TO-263 (MP-25ZK) package.

Feature Summary

  • Low on-state resistance for efficient power handling
  • Excellent switching characteristics suitable for synchronous rectification
  • Compatible with 4.5V drive signals

Applications

  • DC/DC converters with synchronous rectifier
  • Low voltage high current power management circuits

Procurement Notes

Verify the component status as obsolete or end-of-life through official Renesas channels before procurement planning. Confirm that the specific suffix -E1-AZ denotes RoHS compliance and lead-free construction as per manufacturer documentation. Ensure compatibility with existing TO-263 footprints and thermal management requirements for the target application design.

Selection Notes

Select this component for designs requiring 20V rating and high current capacity up to 48A. The low RDS(on) minimizes conduction losses in synchronous rectification topologies. Verify that the 4.5V drive capability aligns with the controller logic levels used in the system architecture to ensure proper gate threshold activation and optimal performance.

Part Context

This part belongs to the 2SK3570 series of N-channel Power MOSFETs from Renesas. The base model 2SK3570 is documented in technical datasheets highlighting its suitability for DC/DC converters. The -ZK suffix indicates the TO-263 package variant, while -E1-AZ typically specifies environmental compliance attributes such as RoHS adherence.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas official resources for cross-reference data or equivalent devices meeting identical electrical specifications.

2SK3570-ZK-E1-AZ2SK3570-ZK-E1-AZ
$1.02
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