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Product Detailed Parameters
- Description：NCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SK3617-TL-E is an N-channel Power MOSFET designed for surface-mount applications. It utilizes a TO-252 (DPAK) package to provide efficient thermal management and compact footprint integration. The device features a drain-source voltage rating of 100 V and a continuous drain current capacity of 6 A. Its typical on-resistance is specified at 0.18 ohms, supporting low-loss switching performance in power conversion circuits.
Feature Summary
- N-channel enhancement mode MOSFET architecture
- Surface-mount DPAK package design
- 100 V breakdown voltage capability
- Low on-resistance for efficiency
Applications
- DC-DC converter modules
- Power supply output stages
- Motor control circuits
Procurement Notes
Verify the specific datasheet revision and electrical parameter tolerances against the manufacturer's official documentation before finalizing component selection. Ensure that the TO-252 package dimensions and pinout configuration match the target PCB layout requirements. Confirm compliance with relevant environmental standards as stated in the product specifications.
Selection Notes
Select this component when a 100 V rating and 6 A current handling are required in a compact surface-mount form factor. Evaluate the 0.18 ohm on-resistance against the specific thermal dissipation needs of the application. Consider the DPAK package constraints for heat sinking and board space limitations compared to larger through-hole alternatives.
Part Context
This part belongs to the single FET MOSFET category from onsemi. It serves as a discrete switching element within broader power management systems. The device supports modern electronic designs requiring reliable high-voltage switching in small packages.
Replacement Considerations
Consult official substitution guides for compatible N-channel MOSFETs with matching voltage and current ratings. Verify pin compatibility and thermal characteristics before replacing the original component.
