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Product Detailed Parameters
- Description：MOSFET N-CH 20V 65A TO220-3
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：5.7mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3 Isolated Tab
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Overview
The Renesas 2SK3659-AZ is an N-channel MOSFET designed for switching applications. It features a drain-to-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 65 A at case temperature. The device typically exhibits an input capacitance (Ciss) of 1700 pF. It is housed in a TO-220-3 isolated tab package, suitable for through-hole mounting.
Feature Summary
- N-channel silicon gate field effect transistor technology
- Low on-state resistance for efficient power switching
- Through-hole mounting capability via TO-220-3 package
Applications
- Industrial equipment power management
- Consumer electronics power circuits
- Low voltage high current switching applications
Procurement Notes
Verify the specific suffix AZ against official Renesas documentation to confirm exact mechanical and electrical tolerances. Ensure the TO-220-3 isolated tab package matches the target PCB footprint and thermal requirements. Confirm lead-free status compliance with relevant regional regulations before integration into final assemblies.
Selection Notes
Select this component when a 20 V rating and 65 A continuous current capacity are required in a through-hole format. Consider the 1700 pF input capacitance for drive circuit design. Evaluate thermal dissipation needs given the TO-220-3 package constraints for high-current operation.
Part Context
This part belongs to Renesas Electronics Corporation's discrete semiconductor portfolio, specifically within the single FETs and MOSFETs category. It serves as a switching element for low-voltage, high-current applications, complementing the company's broader range of power management and control solutions.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Cross-reference pinouts and thermal characteristics carefully when considering alternative manufacturers' parts to ensure functional compatibility without redesign.
