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Product Detailed Parameters
- Description：MOSFET N-CH 60V 35A TO220NIS
- Series：U-MOSIII
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：12.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5120 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：35W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220NIS
- Package / Case：TO-220-3 Full Pack
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Overview
The Toshiba Semiconductor and Storage 2SK3662(F) is an N-channel MOSFET belonging to the U-MOS series. It features a vertical double-diffusion structure designed for low ON-resistance applications. The device is housed in a TO-92MOD package with three pins. Key electrical characteristics include a drain-source breakdown voltage of 80 V, a continuous drain current rating of 1.5 A, and a maximum drain-source on-resistance of 0.0125 Ω. These specifications make it suitable for high-efficiency switching circuits.
Feature Summary
- Utilizes Toshiba's U-MOS vertical double-diffusion structure for enhanced performance
- Achieves exceptionally low drain-source on-resistance for reduced power loss
- Designed for high-speed switching operations in compact packages
Applications
- Lithium-ion secondary battery protection circuits
- Notebook PC power supply circuits
- Portable electronic devices
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix (F) against official Toshiba documentation to confirm packaging details and reel specifications. Ensure the component meets required environmental standards for your target application. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Selection Notes
Select this component when a low-voltage N-channel MOSFET with minimal conduction losses is required. The 80 V rating and 1.5 A current capacity suit portable electronics and battery protection systems. Consider the TO-92MOD package constraints regarding thermal dissipation and mounting space relative to alternative surface-mount options.
Part Context
This device is part of Toshiba's standard small-signal and semi-power MOSFET portfolio. It complements other U-MOS series components like the 2SK3847 and 2SK3845, which share similar structural technologies but differ in voltage and current ratings. The 2SK3662 is positioned for applications requiring efficient power management in compact form factors.
Replacement Considerations
Compatible substitutes within the same family include the 2SK3847 and 2SK3845. Verify that replacement parts match the original voltage, current, and resistance specifications to ensure circuit compatibility.
