2SK3670,F(J

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:62c18d7c3fe4 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：670mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92MOD
Package / Case：TO-226-3, TO-92-3 Long Body

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2SK3670,F(J

Overview

The Toshiba Semiconductor and Storage 2SK3670,F(J is a silicon N-channel MOS type (π-MOSV) field effect transistor designed for chopper regulator and DC-DC converter applications. It features a 2.5V gate drive capability with a typical drain-source ON-resistance of 1.0 Ω and high forward transfer admittance of 2.1 S. The device operates in enhancement mode with a threshold voltage ranging from 0.5 to 1.3 V. It supports a maximum drain-source voltage of 150 V, continuous drain current of 0.67 A, and pulse drain current up to 3 A. Packaged in a JEDEC TO-92MOD format, it includes low leakage current characteristics.

Feature Summary

Utilizes π-MOSV technology for enhanced performance in switching applications
Capable of operation with a low 2.5V gate drive signal
Features low drain-source ON-resistance for improved efficiency
Provides high forward transfer admittance for effective signal control

Applications

Chopper regulators
DC-DC converters

Procurement Notes

Verify the exact ordering suffix against official Toshiba documentation to ensure correct package and environmental compliance specifications. Confirm availability status as manufacturing lifecycles may change. Cross-reference datasheet revision dates to validate electrical parameters before integration into designs.

Selection Notes

Select this component when designing circuits requiring low-voltage gate drive compatibility alongside moderate power handling capabilities. Evaluate thermal resistance and dissipation limits relative to the specific PCB layout and ambient operating conditions to maintain channel temperature within safe operational boundaries during continuous or pulsed loads.

Part Context

This part belongs to the category of discrete semiconductor devices, specifically silicon N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. It is engineered for general electronics applications, focusing on power management functions where efficient switching and low conduction losses are critical requirements for system performance.

Replacement Considerations

Consult official Toshiba resources for verified substitute part numbers that match the required electrical characteristics and physical footprint. Ensure any replacement maintains compatibility with the 2.5V gate drive requirement and meets the necessary voltage and current ratings for the intended application.