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Product Detailed Parameters
- Description：MOSFET N-CH 100V 37A TO220ML
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：37A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：25mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：117 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：6250 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 35W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220ML
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi 2SK3709 is an N-channel power MOSFET designed for general-purpose switching applications. It features a drain-to-source voltage rating of 100V and a continuous drain current capacity of 37A at 25°C ambient temperature. The device utilizes a TO-220ML through-hole package, offering thermal performance suitable for moderate power dissipation requirements with 2W at Ta and 35W at Tc.
Feature Summary
- N-channel enhancement mode construction
- Through-hole mounting capability via TO-220ML package
Applications
- General-purpose power switching circuits
- Low-voltage DC-DC converter stages
- Load switching applications
Procurement Notes
Verify the specific suffix or variant against official manufacturer documentation to ensure compatibility with design specifications. Confirm that the TO-220ML package dimensions and pinout align with the target PCB footprint. Cross-reference electrical limits with system operating conditions to prevent overstress during procurement validation.
Selection Notes
Select this component when a robust N-channel MOSFET is required for 100V systems handling up to 37A. Evaluate thermal management strategies based on the specified power dissipation ratings in both free-air and case-mounted scenarios. Ensure gate drive voltages remain within safe operating limits for reliable switching performance.
Part Context
This part belongs to the discrete semiconductor category, specifically within the single FET and MOSFET segment. It serves as a fundamental building block for power electronics, providing efficient control of electrical flow in various industrial and consumer electronic designs requiring medium-power switching capabilities.
Replacement Considerations
Rochester Electronics lists equivalent availability for this discontinued or legacy part number. Verify functional equivalence regarding pinout and electrical characteristics before substitution.
