2SK3720-6-TB-E

$0.10

Description：NCH 30MA 15V MOSFET
Series：*
Mfr：onsemi
Package：Bulk

SKU:48a49512fdae Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：NCH 30MA 15V MOSFET
Series：*
Mfr：onsemi
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3720-6-TB-E

Overview

The onsemi 2SK3720-6-TB-E is a small signal N-channel silicon MOSFET designed for low-noise applications. It features a maximum drain-source voltage of 15 V and a continuous drain current of 30 mA. The device operates in depletion mode with a single element configuration housed in a CP package. It supports junction temperatures up to 150°C and offers low noise performance suitable for sensitive signal processing circuits.

Feature Summary

Low noise operation optimized for sensitive analog signal paths
Depletion mode functionality for normally-on circuit configurations
Single-element N-channel silicon construction

Applications

VHF amplifier stages
FM tuner input circuits
Low noise pre-amplification

Procurement Notes

Verify the exact suffix against official documentation, as the provided reference data lists the 2SK3720 without the specific -6-TB-E designation. Confirm RoHS compliance status and MSL rating directly from the manufacturer datasheet before integration into production schedules.

Selection Notes

Select this component for designs requiring depletion mode N-channel behavior at low voltages. Ensure the 15 V breakdown limit and 30 mA current capacity align with the target circuit requirements. Consider the CP package constraints for thermal management and PCB layout space.

Part Context

This part belongs to the small signal field-effect transistor category, specifically utilizing silicon MOS technology. It serves as a discrete semiconductor solution for audio and radio frequency applications where low noise figures are critical for maintaining signal integrity in high-gain stages.