ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 1500V 2A TO3PML
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1500 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
- Vgs (Max)：±35V
- Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PML
- Package / Case：TO-3P-3 Full Pack
Download product information
Overview
The onsemi 2SK3747-MG8 is an N-channel power MOSFET designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 1500 V and a continuous drain current (Id) of 2 A at 25°C case temperature. The device exhibits a maximum static drain-source on-resistance (Rds(on)) of 13 Ω at Vgs = 10 V. It operates within a junction temperature range of -55°C to +150°C and has a gate-source voltage rating of 20 V with a threshold voltage of 2.5 V. The total gate charge (Qg) is 37.5 nC, and the power dissipation is rated at 2.5 W. The component is housed in a TO-3PML package.
Feature Summary
- High-voltage capability optimized for robust operation in demanding electrical environments
- Avalanche tested to ensure reliability under transient stress conditions
- Enhanced thermal stability supporting extended operating temperatures up to 150°C
Applications
- Motor drive circuits
- DC-DC converter topologies
- Power switch implementations
- Solenoid drive systems
Procurement Notes
Verify component status as obsolete or end-of-life before integration. Confirm availability through authorized distributors or secondary markets. Validate datasheet revisions and marking codes against current production batches. Ensure compliance with RoHS and REACH requirements specified in official documentation prior to procurement.
Selection Notes
Select this component for designs requiring 1500 V blocking capability with moderate current handling. Consider the 13 Ω on-resistance impact on conduction losses at 2 A load. Evaluate thermal management needs due to 2.5 W power dissipation rating. Verify gate drive compatibility with the 20 V maximum gate-source voltage limit.
Part Context
This part belongs to the 2SK3746/2SK3747 series of N-channel power MOSFETs from onsemi. These devices are silicon-based transistors intended for high-speed switching applications. The series shares similar electrical characteristics but may differ in packaging or specific testing criteria. The 2SK3747-MG8 variant specifically utilizes the TO-3PML package configuration.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Cross-reference with other 1500 V N-channel MOSFETs only after verifying pinout compatibility and electrical parameter equivalence.
