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The Sanken Electric USA Inc. 2SK3800 is an N-channel silicon MOSFET housed in a TO-220S package. It features a drain-source voltage rating of 40V and a continuous drain current capacity of 80A at a case temperature of 25°C. The device exhibits a maximum on-resistance of 5.0mΩ when driven by a gate-source voltage of 10V with a drain current of 35A. Thermal management relies on a junction-to-case thermal resistance of 1.56°C/W, supporting a maximum channel temperature of 150°C.
Verify the specific datasheet version and revision history before finalizing designs. Confirm that the TO-220S package dimensions match your PCB footprint requirements. Ensure thermal interface materials are selected to maintain the specified junction-to-case thermal resistance under actual operating conditions. Check for any RoHS compliance documentation if required by your manufacturing standards.
This component is explicitly marked as not recommended for new designs. Engineers should evaluate alternative components from the manufacturer's current portfolio for future projects. Existing designs utilizing this part must ensure adequate thermal management due to the high current ratings. Verify that the 40V voltage rating provides sufficient margin for the target application's peak transient voltages.
The 2SK3800 belongs to the discrete semiconductor product line manufactured by Sanken Electric. It is designed primarily for power conversion tasks requiring robust switching performance. The device utilizes silicon technology optimized for low on-resistance and fast switching speeds. Its construction supports operation in environments ranging from -40°C to +150°C storage temperatures.
Public confirmed substitute part numbers are not available in the provided documentation.