2SK3814(0)-Z-E2-AZ

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:122bff107e60 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3814(0)-Z-E2-AZ

Overview

The Renesas 2SK3814 is an N-channel power MOSFET designed for high-current switching applications. It features a maximum drain-source voltage of 60 V and a continuous drain current of 60 A at 25°C case temperature. The device offers super low on-state resistance, with RDS(on)1 max 8.7 mΩ at VGS=10V and RDS(on)2 max 10.5 mΩ at VGS=4.5V, both tested at ID=30A. Input capacitance is typically 5450 pF. It supports a single avalanche energy of 102 mJ and operates up to a channel temperature of 150°C.

Feature Summary

Super low on-state resistance optimized for efficient high-current switching
High continuous drain current capability suitable for demanding power loads
Robust avalanche energy rating for inductive load protection

Applications

High current switching circuits
Power management systems
Industrial motor control

Procurement Notes

Verify the specific package variant required (TO-251 or TO-252) against your board layout constraints before ordering. Confirm that the component quality grade meets your application's safety requirements. Ensure thermal management designs account for the specified total power dissipation limits at expected operating temperatures. Check for any recent product change notices regarding manufacturing updates.

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with low conduction losses. Consider the gate charge characteristics for driving efficiency in high-frequency applications. Evaluate the thermal resistance values to ensure adequate heat sinking for the intended duty cycle. Verify compatibility with available gate drive voltages for optimal RDS(on) performance.

Part Context

This part belongs to the Renesas (formerly NEC Electronics) discrete semiconductor portfolio. It is classified as a standard quality grade MOSFET. The datasheet indicates it was issued by Renesas Electronics Corporation following the merger with NEC Electronics. It serves as a general-purpose power switch within their broader range of electronic components.