2SK3815-E

$0.66

Description：NCH 4V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk

SKU:894b7172e742 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：NCH 4V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3815-E

Overview

The onsemi 2SK3815-E is an N-channel RF MOSFET designed for high-frequency applications. It operates within the 4V drive series, optimized for radio frequency power amplification. The device features a single FET configuration suitable for demanding RF environments.

Feature Summary

Optimized for radio frequency power amplification
Designed for high-frequency operation
Single FET configuration

Applications

RF power amplification circuits
High-frequency signal processing

Procurement Notes

Verify the manufacturer part number 2SK3815-E against official onsemi documentation to ensure authenticity. Confirm that the component matches the specified N-channel RF MOSFET characteristics and package type before integration into designs.

Selection Notes

Select this component for applications requiring dedicated RF power amplification capabilities. Ensure the design supports the specific voltage drive requirements associated with the 4V drive series classification for optimal performance.

Part Context

This component belongs to the broader category of discrete semiconductors, specifically falling under the transistor and MOSFET classifications offered by onsemi. It serves as a specialized solution for radio frequency circuit implementations.

Replacement Considerations

Consult official onsemi substitution guides or datasheets to identify verified equivalent parts. Do not assume compatibility with generic RF MOSFETs without verifying electrical parameters and pin configurations.