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Product Detailed Parameters
- Description：MOSFET N-CH 60V 40A TO263-2
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：26mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1780 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.65W (Ta), 50W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-2
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The onsemi 2SK3816-DL-1E is an N-channel power MOSFET housed in a TO-263-2L (SC-83) surface-mount package. It features a drain-to-source voltage of 60 V and a continuous drain current of 40 A at 25°C, with a pulsed current rating of 160 A. The device exhibits a typical static drain-to-source on-state resistance of 20 mΩ at VGS=10V and 28 mΩ at VGS=4V. Key electrical parameters include a total gate charge of 40 nC, input capacitance of 1780 pF, and avalanche energy capability of 60 mJ.
Feature Summary
- Optimized for low ON-resistance to minimize conduction losses
- Capable of 4V logic-level drive for efficient control
- Guaranteed avalanche energy rating for robust operation
Applications
- Motor drive circuits
- DC/DC converter topologies
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix DL-1E to confirm the TO-263-2L reel packaging configuration. Ensure compatibility with the required thermal management strategy, as allowable power dissipation varies significantly between ambient temperature and case temperature conditions. Confirm RoHS compliance status during final component qualification.
Selection Notes
Select this component when a 60V N-channel MOSFET with high current handling is required in a compact surface-mount form factor. The 4V drive capability makes it suitable for systems where lower gate drive voltages are utilized. Evaluate thermal performance based on the specific application's duty cycle and heat sinking capabilities.
Part Context
This part belongs to the 2SK3816 series of N-channel silicon MOSFETs manufactured by onsemi. The standard variant utilizes a TO-262-3L tube package, while the -DL-1E suffix specifically denotes the TO-263-2L reel-packaged version. Both variants share identical electrical characteristics and pin configurations.
Replacement Considerations
The 2SK3816-1E serves as a direct functional equivalent with identical electrical specifications, differing only in the TO-262-3L tube packaging format.
