2SK3826

$1.43

Description：MOSFET N-CH 100V 26A TO220
Series：-
Mfr：onsemi
Package：Bulk

SKU:27db3355c77d Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 26A TO220
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：26A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2150 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.75W (Ta), 45W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

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2SK3826

Overview

The 2SK3826 is an N-Channel Silicon MOSFET designed as a general-purpose switching device. It features a 100V drain-to-source voltage rating and supports a continuous DC drain current of 26A. The component offers low ON-resistance, with maximum values of 60mΩ at VGS=10V and 80mΩ at VGS=4V. It includes avalanche resistance guarantees for single pulses up to 80mJ. The device utilizes a TO-220 package.

Feature Summary

Low ON-resistance for efficient power handling
Optimized for 4V drive applications
Ultrahigh-speed switching capabilities
Guaranteed avalanche resistance

Applications

Motor drive systems
DC/DC converters

Procurement Notes

Verify the manufacturer origin carefully, as the datasheet identifies SANYO Electric Co., Ltd. while the prompt specifies onsemi. Confirm the exact ordering number ENN8243 matches your supply chain requirements. Ensure the component meets all absolute maximum ratings during operation to prevent equipment failure.

Selection Notes

Select this component for applications requiring robust switching performance with specific gate drive voltages. Consider the thermal dissipation limits when designing heat sinks. Verify that the required drain current and voltage ratings align with the circuit's operational parameters to ensure reliability.

Part Context

This N-Channel MOSFET belongs to the general-purpose switching device category. It is engineered for silicon-based power applications. The TO-220 package facilitates through-hole mounting. The device is suitable for environments where moderate power levels and fast switching speeds are necessary.