2SK3850-TL-E

2SK3850-TL-E

$0.48
  • Description:NCH 10V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk

SKU:3c851350509e Category: Brand:

  
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Product Detailed Parameters

  • Description:NCH 10V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SK3850-TL-E

Overview

The onsemi 2SK3850-TL-E is an N-Channel Silicon MOSFET belonging to the 10V Drive Series. It is manufactured by onsemi and packaged in a TO-251 (DPAK) case. The device features a drain-source voltage rating of 600V and a drain-source resistance of 18.5Ω. It is designed for applications requiring efficient switching with low gate drive requirements, suitable for power management circuits where compact packaging and high voltage tolerance are necessary.

Feature Summary

  • N-Channel silicon construction for reliable switching performance
  • Integrated into the 10V Drive Series for optimized gate drive compatibility
  • High voltage capability with 600V drain-source rating
  • Compact TO-251 surface-mount package design

Applications

  • Power supply switching circuits
  • Motor control applications
  • General-purpose power management systems

Procurement Notes

Verify the manufacturer part number 2SK3850-TL-E against official onsemi documentation to ensure authenticity. Confirm the package type is TO-251 and that the device belongs to the 10V Drive Series. Check for any specific lot codes or suffixes that may indicate variations in testing or packaging standards provided by the supplier.

Selection Notes

Select this component when a 600V N-Channel MOSFET with low gate drive requirements is needed. The 18.5Ω on-resistance should be evaluated against thermal constraints in the target application. Ensure the TO-251 package fits the PCB layout and that the 10V drive series compatibility matches the controller's output voltage levels.

Part Context

This device is part of onsemi's portfolio of discrete semiconductors, specifically within the FET and MOSFET category. It continues the lineage of products originally associated with Sanyo Semiconductor before its acquisition by onsemi. The 2SK3850 series is designed for robust performance in industrial and consumer power electronics.

Replacement Considerations

Direct substitutes may include other 600V N-Channel MOSFETs in TO-251 packages from onsemi or other manufacturers, such as the 2SK3856-5-TB-E, though electrical parameters like Rds(on) and gate drive requirements must be verified for compatibility.

2SK3850-TL-E2SK3850-TL-E
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