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Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3901 is an N-channel power MOSFET designed for high current switching applications. It features a TO-263 (MP-25ZK) package with a built-in gate protection diode. Key electrical parameters include a drain-to-source voltage of 60 V, a DC drain current of 60 A at 25°C case temperature, and a pulsed drain current of 150 A. The device exhibits super low on-state resistance, specified as 13 mΩ maximum at VGS = 10 V and ID = 30 A, and 16.5 mΩ maximum at VGS = 4.5 V and ID = 30 A. Input capacitance is typically 1950 pF.
Feature Summary
- Super low on-state resistance optimized for efficient high-current conduction
- Integrated gate protection diode to safeguard against electrostatic discharge
- High single avalanche energy capability for robust inductive load handling
Applications
- High current switching circuits
- Power management systems requiring low conduction losses
- Inductive load driving applications
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm the quality grade aligns with the intended application environment. Check for the latest datasheet revisions to ensure parameter accuracy. Contact Renesas Electronics sales offices for availability confirmation. Ensure compliance with export control laws if applicable.
Selection Notes
Select this component for designs requiring high current capacity and low thermal resistance. Evaluate the total power dissipation limits relative to the case temperature. Consider the gate charge characteristics for switching frequency requirements. Verify that the operating voltage remains within the 60 V drain-to-source rating.
Part Context
This part is manufactured by Renesas Electronics Corporation, formerly NEC Electronics Corporation. The product falls under the category of discrete semiconductor transistors. It is classified as a standard quality grade component suitable for general industrial and commercial electronics applications.
Replacement Considerations
Consult official substitution lists from Renesas Electronics. Verify pinout compatibility and package dimensions before replacement. Ensure electrical ratings meet or exceed original design specifications.
FAQ
Does the 2SK3901 include internal protection circuitry?
Yes, the device includes a built-in gate protection diode connected between the gate and source.
What is the maximum pulsed drain current rating?
The maximum pulsed drain current is 150 A, provided the pulse width is less than or equal to 10 µs and the duty cycle is less than or equal to 1%.
