2SK3902(0)-ZK-E1-AY

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:6fa17080e1e4 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3902(0)-ZK-E1-AY

Overview

The 2SK3902(0)-ZK-E1-AY is an N-channel power MOSFET designed for high current switching applications. It features a TO-263 (MP-25ZK) package with a built-in gate protection diode and body diode. Key electrical parameters include a drain-source voltage of 60 V, a continuous drain current of 30 A at 25°C case temperature, and a maximum on-state resistance of 21 mΩ at VGS = 10 V and ID = 15 A. The device supports a single avalanche energy of 40 mJ and has a total power dissipation of 45 W at 25°C case temperature.

Feature Summary

Super low on-state resistance for efficient power handling
Built-in gate protection diode for ESD safety
High current switching capability

Applications

High current switching circuits
Power management systems
Industrial equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package and quality grade alignment. Confirm that the component meets the required environmental standards and quality grades for the intended application before procurement.

Selection Notes

Select this component based on its 60 V rating and 30 A continuous current capacity. Ensure the thermal design accommodates the specified power dissipation limits. Verify compatibility with the required gate drive voltages for optimal on-state resistance performance.

Part Context

This part is manufactured by Renesas Electronics Corporation, formerly NEC Electronics Corporation. It belongs to the discrete semiconductor transistor category. The product line includes various packaging options and quality grades tailored for different industrial and commercial applications.