2SK3906(Q)

Description：MOSFET N-CH 600V 20A TO3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:95fc018f15ab Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 20A TO3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：330mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：4250 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：150W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P(N)
Package / Case：TO-3P-3, SC-65-3

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2SK3906(Q)

Overview

The Toshiba Semiconductor and Storage 2SK3906(Q) is a silicon N-channel MOS field-effect transistor utilizing MACH II π-MOS VI technology. Designed for switching regulator applications, it features a drain-source voltage rating of 600 V and a continuous DC drain current capacity of 20 A at 25°C case temperature. The device exhibits a typical drain-source ON-resistance of 0.27 Ω and a total gate charge of 60 nC. It supports a maximum channel temperature of 150 °C and includes an integrated body diode with a reverse recovery time of 400 ns.

Feature Summary

Utilizes MACH II π-MOS VI technology to achieve low on-resistance and fast switching performance
Features a high forward transfer admittance of 15 S for efficient signal amplification
Incorporates a fast reverse recovery body diode suitable for synchronous rectification
Designed with enhanced avalanche energy capability for robust operation in inductive loads

Applications

Switching regulators
High-frequency power conversion circuits
Inductive load driving applications

Procurement Notes

Verify the specific suffix designation against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the ordering information matches the exact package type and marking requirements specified in the manufacturer's datasheet before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high-voltage handling up to 600 V combined with moderate current capabilities. Ensure thermal management strategies account for the 150 W dissipation rating at 25°C case temperature. Verify that gate drive voltages remain within the ±30 V absolute maximum rating to prevent breakdown.

Part Context

This device belongs to the family of silicon N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. It is engineered specifically for power switching applications where efficiency and speed are critical. The component utilizes advanced planar cell technology to minimize conduction losses while maintaining high reliability under repetitive stress conditions.

Replacement Considerations

Consult official Toshiba substitution guides or equivalent manufacturer cross-reference lists to identify compatible alternatives. Verify that any substitute part meets or exceeds the 600 V drain-source voltage and 20 A continuous current ratings.