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Product Detailed Parameters
- Description：2SK3978 - N-CHANNEL SILICON MOSF
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：550mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 20W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TP
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
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Overview
The onsemi 2SK3978-TL-E is an N-channel silicon MOSFET designed for through-hole mounting in the TP package. It supports a drain-source voltage of 200 V and a continuous drain current of 4 A at ambient temperature. The device delivers 1 W thermal dissipation at Ta and 20 W at case temperature. Key electrical characteristics include gate drive voltages of 4 V and 10 V, with corresponding maximum on-resistance values optimized for efficient switching performance in power management applications.
Feature Summary
- N-channel silicon construction for robust switching capabilities
- Through-hole TP package design for reliable mechanical mounting
- High voltage tolerance suitable for industrial power stages
Applications
- Power supply circuits requiring 200V isolation
- Motor control systems utilizing low-side switching
- Industrial automation power modules
Procurement Notes
Verify the specific suffix TL-E against the official onsemi datasheet to confirm pinout and thermal specifications. Ensure the procurement channel provides authentic components with traceable lot codes. Cross-reference the RoHS status and packaging details directly with manufacturer documentation before finalizing orders to avoid compatibility issues.
Selection Notes
Select this component when a 200 V N-channel MOSFET with through-hole mounting is required. Consider the 4 A current rating and thermal limits at 1 W (Ta) or 20 W (Tc). Evaluate the gate drive requirements of 4 V or 10 V against the system controller output capabilities to ensure proper saturation and minimal conduction losses.
Part Context
This part belongs to the discrete semiconductor category, specifically within single FETs and MOSFTs. It serves as a fundamental switching element in power electronics, distinct from integrated logic or regulator families. The TP package indicates a specific through-hole form factor used in legacy or high-reliability board designs.
Replacement Considerations
Consult the official onsemi replacement guide for direct equivalents. Verify that any substitute matches the 200 V rating, 4 A current capacity, and TP package dimensions. Ensure gate threshold and on-resistance parameters align with the original design constraints.
