2SK4016(Q)

Description：MOSFET N-CH 600V 13A TO220SIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:8471e91f338e Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 13A TO220SIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：500mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220SIS
Package / Case：TO-220-3 Full Pack

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2SK4016(Q)

Overview

The Toshiba 2SK4016 is a silicon N-channel MOS field-effect transistor utilizing π-MOS VI technology, designed for switching regulator applications. It features a drain-source voltage rating of 600 V and a continuous DC drain current capacity of 13 A at a case temperature of 25°C. The device exhibits a typical drain-source ON-resistance of 0.33 Ω and a forward transfer admittance of 10 S. Key electrical characteristics include a gate threshold voltage range of 2.0 to 4.0 V and a maximum gate leakage current of ±10 μA. Thermal performance is defined by a channel-to-case thermal resistance of 2.5 °C/W.

Feature Summary

Utilizes π-MOS VI technology for enhanced switching performance
Features low drain-source ON-resistance for efficient power handling
Provides high forward transfer admittance for improved gain
Includes built-in diode characteristics with specified reverse recovery parameters

Applications

Switching regulator circuits
General electronics applications such as industrial robots and measuring equipment
Home electronics appliances

Procurement Notes

Verify the specific ordering suffix and lot number markings on the component body to confirm environmental compliance status, such as RoHS compatibility, as indicated in the datasheet. Ensure that the procurement documentation aligns with the manufacturer's latest reliability handbook and handling precautions. Confirm the package type matches the JEDEC SC-67 or Toshiba 2-10U1B specifications before integration into designs.

Selection Notes

Select this component for designs requiring a 600 V breakdown voltage and up to 13 A continuous current capability. Consider the thermal resistance of 2.5 °C/W when designing heat dissipation strategies for case temperatures. Evaluate the gate threshold voltage range of 2.0 to 4.0 V to ensure compatibility with the intended drive circuitry logic levels. Account for the single-pulse avalanche energy rating of 1033 mJ if transient overvoltage protection is required within the system architecture.

Part Context

This device belongs to the Toshiba Field Effect Transistor series, specifically employing Silicon N-Channel MOS technology. It is categorized under discrete semiconductors intended for general electronic applications. The product line emphasizes reliability through adherence to specific manufacturing standards and includes detailed thermal and electrical characterization data for design validation purposes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer directly for potential alternatives or updated product lines.