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Product Detailed Parameters
- Description：MOSFET N-CH 250V 4.5A PW-MOLD2
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：440 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：20W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PW-MOLD2
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The Toshiba 2SK4021(Q) is a silicon N-channel MOSFET utilizing π-MOS V technology, designed for switching regulators and motor drives. It features a drain-source voltage of 250 V and a continuous DC drain current of 4.5 A at 25°C case temperature. The device exhibits a typical drain-source ON-resistance of 0.8 Ω and a forward transfer admittance of 4.5 S. It operates in enhancement mode with a gate threshold voltage between 1.5 V and 3.5 V. The component supports a pulse drain current of 18 A and dissipates up to 20 W at 25°C. It is housed in a TO-220AB package.
Feature Summary
- Utilizes π-MOS V technology for low ON-resistance and high-speed switching capabilities
- Features high forward transfer admittance for efficient drive requirements
- Includes an integrated body diode with defined reverse recovery characteristics
- Capable of handling repetitive avalanche energy for robust operation
Applications
- Switching Regulators
- DC-DC Converter Applications
- Motor Drive Applications
Procurement Notes
Verify the specific suffix (Q) against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as standard markings may vary. Ensure the ordering information matches the exact pinout and thermal resistance specifications required for your heat sink design. Confirm that the requested quantity aligns with manufacturer distribution channels rather than third-party stock claims.
Selection Notes
Select this component when a 250 V rating and 4.5 A continuous current are required in a TO-220AB package. Consider its 0.8 Ω ON-resistance for conduction loss calculations in power supply designs. Evaluate the 6.25 °C/W thermal resistance for heatsinking needs. Verify that the 1.5 V to 3.5 V threshold voltage is compatible with your logic or gate driver output levels.
Part Context
This part belongs to the Toshiba Field Effect Transistor series employing Silicon N-Channel MOS Type technology. It is engineered specifically for general electronics applications where moderate power switching is needed. The device is distinct from higher-power industrial modules, focusing on compact TO-220AB integration for consumer and industrial equipment.
Replacement Considerations
Consult Toshiba's official cross-reference guides for verified substitutes. Ensure any replacement maintains the 250 V D-S voltage, 4.5 A current rating, and TO-220AB footprint. Verify that the alternative device meets the same electrical life and thermal performance standards.
