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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET, 75V, 100
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：220 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12200 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.65W (Ta), 90W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-2
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The 2SK4065-DL-1E is an N-Channel Power MOSFET manufactured by onsemi, designed for general-purpose switching applications. It features a drain-source voltage (VDSS) of 75V and a continuous drain current (ID) of 100A at 25°C case temperature. The device exhibits a typical on-resistance (RDS(on)) of 4.6mΩ when driven at 4V gate-source voltage. Packaged in a TO-263-2L surface-mount format, it supports a maximum power dissipation of 90W at case temperature and 1.65W at ambient temperature. The component operates within a junction temperature range up to 150°C.
Feature Summary
- Low on-resistance for efficient power handling
- High current capability for robust performance
- Fast switching speed characteristics
Applications
- General purpose switching circuits
- Power supply modules
- Driver circuits requiring low loss
Procurement Notes
Verify the specific suffix DL-1E against official datasheets to confirm the tape-and-reel packaging configuration and lead-free status. Ensure compatibility with TO-263-2L footprints during procurement planning. Confirm end-of-life or obsolescence status directly with the manufacturer before finalizing orders.
Selection Notes
Select this component for designs requiring high current capacity with low conduction losses at 75V levels. Evaluate thermal management requirements carefully due to the significant difference between case and ambient power dissipation ratings. Ensure gate drive voltages align with the specified RDS(on) test conditions for optimal efficiency.
Part Context
This part belongs to the N-Channel Power MOSFET category from onsemi. It shares family characteristics with other devices in the series but is distinctively packaged in TO-263-2L. The model represents a standard solution for medium-voltage, high-current switching tasks in industrial and consumer electronics.
Replacement Considerations
Consult official substitution guides for equivalent parts. Verify pinout compatibility and electrical parameters such as VDSS, ID, and RDS(on) match before replacing.
