2SK879-Y(TE85L,F)

Jfets Overview

The Toshiba 2SK879-Y(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for general-purpose and impedance conversion applications. It features a high gate-drain breakdown voltage of −50 V and low noise performance with a typical figure of 0.5 dB at 120 Hz. The device operates in the SC-70 (SOT-323) surface-mount package, supporting a maximum drain power dissipation of 100 mW and a junction temperature up to 125 °C. Electrical characteristics include a gate-source cut-off voltage ranging from −0.4 V to −5.0 V and an input capacitance of 8.2 pF.

Jfets Feature Summary

• High breakdown voltage capability of −50 V for robust operation
• Low noise figure of 0.5 dB suitable for sensitive signal processing
• High input impedance with minimal gate leakage current

Jfets Applications

• General-purpose amplification circuits
• Impedance converter stages
• Condenser microphone preamplifiers

Jfets Procurement Notes

Verify the specific IDSS classification suffix 'Y' corresponds to the required drain current range of 1.2 mA to 3.0 mA during procurement. Confirm that the TE85L,F marking indicates the correct tape-and-reel packaging format for automated assembly processes. Ensure compliance with RoHS directives and environmental regulations applicable to your region before finalizing orders.

Jfets Selection Notes

Select this component when a small footprint JFET with high input impedance and low noise is required. The Y suffix denotes a specific drain current bin; verify this matches your circuit's biasing requirements against other available bins like R, O, or GR. Consider the SC-70 package dimensions if space constraints are critical compared to larger through-hole alternatives.

Jfets Part Context

This part belongs to Toshiba's line of silicon N-channel JFETs, specifically engineered for audio and low-frequency signal processing. The 2SK879 series provides a compact solution for replacing larger discrete transistors in modern portable electronics. Its design focuses on minimizing noise while maintaining high reliability in standard consumer and industrial electronic devices.

Jfets Replacement Considerations

Direct substitutes require matching the N-channel JFET type, SC-70 package, and similar electrical parameters such as VGDS and NF. Verify that any alternative component meets the same thermal and voltage ratings to ensure circuit compatibility without redesign.

Jfets FAQ

What is the typical noise figure of the 2SK879?

The typical noise figure is 0.5 dB when measured with RG = 100 kΩ at a frequency of 120 Hz.

What does the 'Y' suffix indicate in the part number?

The 'Y' suffix specifies the Drain Current (IDSS) classification, which ranges from 1.2 mA to 3.0 mA under test conditions of VDS = 10 V and VGS = 0.

What is the maximum gate-drain breakdown voltage?

The maximum gate-drain breakdown voltage (V(BR)GDS) is −50 V.