2SK880-Y(TE85L,F)

Jfets Overview

The Toshiba 2SK880-Y(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for audio frequency low noise amplifier applications. It features a small SC-70 (SOT-323) surface-mount package with three terminals. The device operates with a gate-drain breakdown voltage of -50 V and a maximum drain power dissipation of 100 mW at 25°C ambient temperature. Key electrical characteristics include a typical forward transfer admittance of 15 mS, an input capacitance of 13 pF, and a noise figure of 1.0 dB under specified conditions. The Y suffix indicates a drain current classification range of 1.2 to 3.0 mA.

Jfets Feature Summary

• Designed specifically for audio frequency low noise amplifier applications
• Features high forward transfer admittance for effective signal amplification
• Provides high input impedance suitable for sensitive circuit interfaces
• Utilizes a compact SC-70 surface-mount package for space-constrained designs

Jfets Applications

• Audio frequency low noise amplifiers
• High impedance input stages
• Precision analog signal processing circuits

Jfets Procurement Notes

Verify the specific ordering suffix matches the required drain current classification, as the 'Y' designation corresponds to a 1.2 to 3.0 mA IDSS range. Confirm the package type is SC-70/SOT-323 and ensure compatibility with surface-mount assembly processes. Cross-reference the manufacturer part number with official Toshiba Semiconductor and Storage documentation to validate authenticity and revision status before procurement.

Jfets Selection Notes

Select this component when low noise performance is critical in audio or precision analog front-end designs. The high gate-drain breakdown voltage of -50 V allows for robust operation in various biasing configurations. Ensure the application requires the specific transconductance and capacitance values provided by the N-channel JFET architecture within the small form factor.

Jfets Part Context

This component belongs to the Toshiba 2SK880 series of silicon N-channel junction FETs. The series includes variants differentiated by drain current classifications, such as GR and BL, which offer different IDSS ranges while maintaining similar electrical characteristics. The 2SK880 is engineered primarily for high-performance audio applications requiring minimal signal degradation.

Jfets Replacement Considerations

Compatible substitutes within the same family include the 2SK880-GR(T5LMBS,F) and 2SK880-BL(TE85L,F). Verify that the alternative variant's drain current classification aligns with the circuit design requirements, as these parameters differ across the series options.

Jfets FAQ

What is the typical noise figure of the 2SK880?

The typical noise figure is 1.0 dB, measured at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, and RG = 1 kΩ.

What does the 'Y' suffix indicate in the part number?

The 'Y' suffix denotes the drain current (IDSS) classification, specifying a range of 1.2 to 3.0 mA at VDS = 10 V and VGS = 0.

What is the maximum gate-drain breakdown voltage?

The maximum gate-drain breakdown voltage (V(BR)GDS) is -50 V.