2STF2360

Single Bipolar Transistors Overview

The STMicroelectronics 2STF2360 is a PNP power transistor manufactured using PB-HDC technology. It features a maximum collector-emitter voltage of 60 V and a continuous collector current of 3 A. The device offers a transition frequency of 130 MHz and a maximum power dissipation of 1.4 W. Key electrical characteristics include a DC current gain (hFE) of at least 160 at 1 A and 2 V, and a collector-emitter saturation voltage of 500 mV at 150 mA base current and 3 A collector current. It operates up to a junction temperature of 150°C and is housed in an SOT-89-3 surface-mount package.

Single Bipolar Transistors Feature Summary

• Very low collector-emitter saturation voltage for efficient conduction
• High current gain characteristic for effective drive requirements
• Fast-switching speed suitable for high-frequency applications

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Low-voltage power management systems
• Driver stages requiring high gain and fast response

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component status remains active before finalizing design-in decisions. Cross-reference the SOT-89-3 pinout with your PCB layout to prevent installation errors. Ensure thermal management strategies align with the 1.4 W power dissipation limit under expected operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 60 V breakdown and 3 A current capability is required. The PB-HDC technology provides superior gain and lower saturation voltage compared to standard bipolar transistors. Consider the SOT-89-3 package for space-constrained surface-mount designs. Evaluate the 130 MHz transition frequency to ensure suitability for the target switching speeds.

Single Bipolar Transistors Part Context

The 2STF2360 belongs to the 2STF23 series of low-voltage fast-switching PNP power transistors from STMicroelectronics. This series utilizes advanced PB-HDC technology to deliver high performance in compact packages. The device is designed for applications demanding efficient power handling and rapid switching within low-voltage environments.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.