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The GeneSiC Semiconductor 2W01M is a single-phase silicon bridge rectifier rated for 2.0 A average forward current at 50°C ambient temperature. It features a maximum recurrent peak reverse voltage of 100 V and a maximum DC blocking voltage of 100 V. The device has a maximum instantaneous forward voltage of 1.1 V at 2.0 A and supports a peak forward surge current of 50 A. Operating junction temperature ranges from -55°C to +125°C, with storage temperatures up to +150°C.
Verify the manufacturer designation on official documentation, as some distributor listings may attribute this component to Navitas Semiconductor or Taiwan Semiconductor due to corporate acquisitions. Confirm the specific datasheet version matches the required electrical characteristics before procurement.
Select the 2W01M when a 100 V peak reverse voltage rating is required alongside a 2.0 A continuous current capacity. Ensure derating is applied for capacitive loads, which requires a 20% reduction in forward current. Verify thermal resistance parameters if operating near the maximum junction temperature limits.
This component belongs to the 2W005M through 2W10M series of single-phase silicon bridge rectifiers. The series offers varying voltage ratings from 50 V to 1000 V while maintaining a consistent 2.0 A current rating and WOB package form factor across all variants.
Compatible substitutes within the same series include the 2W005M, 2W02M, 2W04M, 2W06M, 2W08M, and 2W10M, provided their respective voltage ratings meet the circuit requirements.