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30C01M-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 0.4A 30V. Review the specifications below when checking this part for your BOM.
The 30C01M-TL-E is a single NPN bipolar junction transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 600 mA. The device supports a transition frequency of 200 MHz and dissipates up to 400 mW of power. It is housed in a compact SC-70 (SOT-323) surface-mount package, designated as 3-MCPH. Key electrical characteristics include a DC current gain of at least 200 at 50 mA with 2 V Vce, and a saturation voltage of 190 mV at 10 mA base and 200 mA collector currents.
Verify the specific suffix against official manufacturer documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status directly with the supplier. Ensure the ordering part number matches the required package variant. Cross-reference datasheet revisions to validate electrical limits before finalizing procurement orders.
Select this component when a small-form-factor NPN transistor is required for high-speed switching or amplification. Compare the 50 V breakdown voltage against circuit peak voltages to ensure adequate margin. Evaluate the 600 mA current limit against load requirements. Consider the thermal dissipation capabilities within the SC-70 package for the intended operating environment.
This component belongs to the 30C01 series of small-signal NPN transistors from onsemi. The series is designed for general-purpose applications requiring reliable performance in compact electronic devices. The 'TL-E' suffix typically indicates specific packaging and environmental compliance attributes defined by the manufacturer.
Consult official substitution guides for verified equivalents. Generic replacements must match the 50 V rating, 600 mA current capacity, and SC-70 package dimensions. Verify pinout compatibility and electrical parameter overlaps before implementation.
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