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The 4N25M is a general-purpose transistor output optocoupler manufactured by Everlight Electronics Co Ltd. It consists of an infrared emitting diode driving a silicon phototransistor in a standard plastic 6-pin dual-in-line package. The device provides high isolation voltage between input and output, with a rated Viso of 5000 Vrms. Key electrical parameters include a maximum collector-emitter voltage (Vceo) of 80 V, a forward current (If) of 60 mA, and a typical forward voltage (Vf) of 1.2 V at 60 mA. The unit features a minimum current transfer ratio (CTR) of 20%, a maximum dark current of 50 nA, and operates within a temperature range of -55°C to +110°C.
Verify the specific manufacturer part number against official Everlight documentation to ensure authenticity. Confirm that the component meets required RoHS compliance standards and UL/VDE safety approvals for your target market. Check datasheet revisions for any updates to mechanical dimensions or electrical characteristics before finalizing procurement specifications.
Select this component when a general-purpose optocoupler with high isolation voltage is required for digital signal transmission. Ensure the application circuit accommodates the specified CTR range and operating temperature limits. Verify that the DIP-6 package fits the available PCB space and that the voltage ratings meet system isolation requirements.
The 4N25M belongs to the 4N2X series of general-purpose phototransistor optocouplers produced by Everlight Electronics. This series includes variants such as the 4N25, 4N26, 4N27, and 4N28. These devices are designed for applications requiring reliable electrical isolation between low-voltage control circuits and higher-voltage loads or systems.
Compatible substitutes within the same family include the 4N25, 4N26, 4N27, and 4N28. Verify pinout compatibility and electrical parameter alignment, particularly current transfer ratio and isolation voltage, before substituting.