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The Toshiba 4N25(SHORT,F) is a single-channel phototransistor output optocoupler housed in a 6-pin DIP package. It features an infrared emitting diode and an NPN silicon phototransistor for signal isolation. Key electrical parameters include a collector-emitter voltage of 30V, a forward voltage of 1.5V, and a minimum current transfer ratio of 20%. The device supports a maximum input current of 60mA and offers an isolation voltage of 3750Vrms. Operating temperatures range from -40°C to +100°C, with typical rise and fall times of 2μs.
Verify the specific suffix 'SHORT,F' against official Toshiba documentation to confirm lead frame configuration and tape-and-reel packaging details. Ensure compliance with RoHS directives and check for any automotive or high-reliability certifications required by the target application environment before finalizing procurement.
Select this component when a cost-effective, general-purpose optocoupler with moderate speed and high isolation voltage is required. Consider the 20% minimum CTR for logic level compatibility and verify that the 30V output voltage rating aligns with the downstream circuit requirements. Evaluate thermal management needs given the 100°C maximum operating temperature limit.
This part belongs to the 4N25 series of optocouplers, a widely recognized family for basic isolation applications. The 4N25 variant typically serves as a standard reference for general-purpose switching. The specific Toshiba designation indicates manufacturing by Toshiba Semiconductor and Storage, adhering to industry-standard pinouts and electrical characteristics for DIP-6 packaged devices.
Compatible substitutes include the ON Semiconductor 4N25M and Vishay ILD207. Verify pinout compatibility and ensure that the substitute's current transfer ratio and isolation voltage meet or exceed the original specifications for direct replacement.