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Product Detailed Parameters
- Description：OPTOISO 2.5KV TRANS W/BASE 6-DIP
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- Number of Channels：1
- Voltage - Isolation：2500Vrms
- Current Transfer Ratio (Min)：40% @ 10mA
- Current Transfer Ratio (Max)：-
- Turn On / Turn Off Time (Typ)：3µs, 3µs
- Rise / Fall Time (Typ)：-
- Input Type：DC
- Output Type：Transistor with Base
- Voltage - Output (Max)：30V
- Current - Output / Channel：100mA
- Voltage - Forward (Vf) (Typ)：1.15V
- Current - DC Forward (If) (Max)：60 mA
- Vce Saturation (Max)：300mV
- Operating Temperature：-55°C ~ 100°C
- Mounting Type：Through Hole
- Package / Case：6-DIP (0.300", 7.62mm)
- Supplier Device Package：6-DIP
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Overview
The Toshiba 4N35(SHORT,F) is a single-channel optoisolator featuring a transistor output configuration housed in a 6-pin DIP package. It provides electrical isolation with a maximum insulation voltage of 2500 V and a minimum collector-emitter breakdown voltage of 30 V. The device supports a nominal current transfer ratio of 100% and has a maximum forward current rating of 0.06 A. It operates within a temperature range of -55 °C to 100 °C and includes an integrated base for the phototransistor.
Feature Summary
- Integrates a gallium arsenide infrared emitting diode with a phototransistor output containing an integrated base resistor to optimize switching speed and high-temperature performance.
- Provides reliable electrical isolation between input and output circuits, suitable for noise immunity in signal transmission applications.
Applications
- Signal isolation in industrial control systems
- Interface circuits for general-purpose electronic equipment
- Noise reduction in data transmission lines
Procurement Notes
Verify the specific suffix designation against the manufacturer's official documentation to confirm pinout compatibility and lead form variations. Ensure that the procurement source provides valid traceability records and confirms compliance with RoHS directives as stated in the component specifications. Cross-reference the part number with the latest Toshiba Semiconductor and Storage catalogs to validate current production status and availability before finalizing orders.
Selection Notes
Select this component when a standard single-channel isolation solution with a transistor output is required for low-to-medium speed signal transmission. Consider the 2500 V isolation rating and the -55 °C to 100 °C operating range to ensure suitability for the target environmental conditions. Evaluate the 100% nominal current transfer ratio against the drive requirements of the receiving circuit to guarantee adequate signal integrity across the isolation barrier.
Part Context
This component belongs to the widely utilized 4N35 series of optocouplers produced by Toshiba Semiconductor and Storage. The series is recognized for its robust construction and reliability in providing galvanic isolation. The 4N35(SHORT,F) variant specifically denotes a particular packaging or lead configuration within this established family, maintaining the core functional characteristics of the standard 4N35 device while adhering to specific mechanical constraints.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with generic 4N35 equivalents only if they match the exact pinout, isolation voltage, and thermal specifications defined by Toshiba Semiconductor and Storage.
