55GN01MA-TL-E

Bipolar RF Transistors Overview

The 55GN01MA-TL-E is a single NPN bipolar junction transistor (BJT) manufactured by onsemi, designed for radio frequency applications. It features a maximum collector current of 70 mA and a collector-emitter breakdown voltage of 10 V. The device operates with a transition frequency of 4.5 GHz and has a maximum power dissipation of 200 mW. It is housed in a surface-mount 3-CP package, suitable for compact RF circuit designs requiring high-frequency performance.

Bipolar RF Transistors Feature Summary

• Optimized for high-frequency RF signal processing
• Compact surface-mount packaging for space-constrained layouts

Bipolar RF Transistors Applications

• RF amplifier stages
• High-frequency oscillator circuits
• Wireless communication modules

Bipolar RF Transistors Procurement Notes

Verify the specific suffix MA against official onsemi documentation to confirm pinout and electrical characteristics match your design requirements. Ensure the component source provides valid traceability and authenticity certificates to mitigate counterfeit risks during procurement.

Bipolar RF Transistors Selection Notes

Select this component when an NPN BJT with a 10V rating and 4.5GHz transition frequency is required. Compare its 70mA current limit and 200mW power dissipation against circuit load demands to ensure adequate thermal and electrical headroom for the intended application.

Bipolar RF Transistors Part Context

This part belongs to the 55GN01 series of RF transistors from onsemi. It shares the core 55GN01 architecture but utilizes the TL-E suffix to denote specific packaging and tape-and-reel configuration details defined by the manufacturer for automated assembly processes.

Bipolar RF Transistors Replacement Considerations

Consult onsemi's official substitution guide for verified equivalents. Cross-reference key parameters such as transition frequency, gain, and package dimensions before replacing with other NPN RF transistors to maintain circuit stability.