5962-9320101MXA

Overview

The Texas Instruments 5962-9320101MXA is a high-performance, radiation-hardened static random-access memory (SRAM) component designed for military and aerospace applications. It features a 4-megabit capacity organized as 524,288 words by 9 bits, incorporating built-in error correction code (ECC) logic to ensure data integrity in harsh environments. The device operates within an extended temperature range of -55°C to +125°C and utilizes a hermetically sealed ceramic flatpack package to withstand extreme mechanical and thermal stress.

Feature Summary

• Radiation-hardened design optimized for space and defense environments
• Integrated single-bit error detection and correction capabilities
• Hermetically sealed ceramic construction for environmental protection

Applications

• Satellite onboard data handling systems
• Avionics flight control memory storage
• Military radar signal processing units

Procurement Notes

Verify the specific suffix 'MXA' against the manufacturer's current datasheet to confirm pinout compatibility and package dimensions. Ensure that procurement channels provide valid traceability documentation required for defense contracts. Confirm that the supplier adheres to strict handling protocols for ceramic packages to prevent mechanical damage during transit and installation.

Selection Notes

Select this component when mission-critical reliability and radiation tolerance are primary requirements over cost efficiency. Evaluate system power budgets carefully, as radiation-hardened SRAMs typically consume more power than commercial equivalents. Consider the availability of long-term supply agreements due to the specialized nature of military-grade fabrication processes.

Part Context

This part belongs to Texas Instruments' family of radiation-hardened memory solutions, specifically tailored for the MIL-STD-883 standard. It serves as a robust alternative to commercial SRAMs in scenarios where single-event upsets or total ionizing dose effects could compromise system functionality. The inclusion of ECC distinguishes it from basic memory arrays by providing active data protection mechanisms.

Replacement Considerations

Direct replacements must match the 4Mb capacity, ECC functionality, and ceramic flatpack form factor. Verify that any substitute component meets the same radiation hardness levels and temperature specifications. Cross-reference pin assignments and electrical characteristics to ensure seamless integration without redesigning the host circuit board.