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64-2013PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for 64-2013PBF
- Description：MOSFET
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for 64-2013PBF
FET, MOSFET Arrays Overview
The IRF7413PBF-1 is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in an SO-8 surface-mount package. It features a maximum drain-source voltage (V_DS) of 30 V and a continuous drain current (I_D) rating of 13 A at 25°C ambient temperature. The device exhibits a maximum on-resistance (R_DS(on)) of 11 mΩ at a gate-source voltage of 10 V, and 18 mΩ at 4.5 V. Key switching parameters include a total gate charge (Q_G) of 52 nC at 10 V and a gate-drain charge (Q_gd) of 16 nC. Thermal performance is defined by a junction-to-ambient thermal resistance (R_thJA) of 50 K/W, with a maximum operating junction temperature (T_j) of 150 °C and a maximum power dissipation (P_tot) of 2.5 W at 25°C.
FET, MOSFET Arrays Feature Summary
- Utilizes HEXFET technology for enhanced power handling capabilities
- Designed for efficient high-frequency switching applications
- Provides low conduction losses through minimized on-resistance
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Power management systems
- Motor control interfaces
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix '-1' against official Infineon documentation to confirm exact ordering specifications. Ensure the component matches the SO-8 package outline and lead finish requirements for your assembly process. Cross-reference the part number with the manufacturer's current datasheet revision to validate electrical characteristics before finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Select this component when a 30 V N-channel MOSFET is required for compact designs. The SO-8 package suits space-constrained PCB layouts. Evaluate the R_DS(on) values at your specific gate drive voltage to ensure efficiency targets are met. Consider the thermal resistance limits if operating in enclosed environments without forced cooling.
FET, MOSFET Arrays Part Context
This part belongs to the Infineon HEXFET family of power MOSFETs, known for robust performance in power switching applications. The IRF series typically integrates advanced cell architecture for improved reliability. As a discrete power device, it serves as a fundamental building block for converting and controlling electrical energy in various electronic systems.
FET, MOSFET Arrays Replacement Considerations
Consult Infineon's cross-reference tools for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
