935121424610-T3N

Overview

The Murata 93512142410-T3N is a silicon RF capacitor with a capacitance of 0.1 µF and a voltage rating of 11 V. It utilizes thin film technology in a 0402 (1005 Metric) package. The component operates within a temperature range of -55°C to +150°C. Key features include a low profile design suitable for space-constrained applications.

Feature Summary

• Utilizes silicon thin film technology for stable RF performance
• Low profile construction optimized for compact circuit layouts
• Extended operating temperature range up to 150°C

Applications

• RF signal coupling and decoupling
• High-frequency filtering circuits
• Space-constrained mobile device designs

Procurement Notes

Verify the exact part number suffix against official Murata documentation to confirm tape and reel specifications. Ensure compatibility with surface mount assembly processes. Confirm RoHS compliance status through current manufacturer declarations prior to procurement.

Selection Notes

Select this component when high-temperature stability and minimal footprint are required. The 0402 package suits dense PCB layouts. Consider the 11V rating for low-voltage RF paths. Validate thermal requirements against the 150°C maximum limit.

Part Context

This silicon capacitor belongs to Murata's series of thin film components designed for radio frequency applications. Silicon dielectric materials offer superior stability compared to traditional ceramic types in high-frequency environments.

Replacement Considerations

Consult official Murata substitution guides for verified equivalents. Generic cross-references may not match the specific silicon thin film characteristics or thermal limits of this model.

FAQ

What is the maximum operating temperature?

The component supports an operating temperature range up to +150°C.

What packaging format is used?

It is housed in a standard 0402 (1005 Metric) surface mount package.