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ABS10B-13 is listed in the Bridge Rectifier range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is BRIDGE RECT 1P 1KV 1.5A 4-SOPA. Review the specifications below when checking this part for your BOM.
The ABS10B-13 is a 1.5A surface mount glass passivated bridge rectifier manufactured by Diodes Incorporated. It features a SOPA-4 case with a peak repetitive reverse voltage of 1000V and an average rectified output current of 1.5A at +40°C. The forward voltage per element is 1.1V at 1.5A, while leakage current is 5μA at 25°C and 500μA at 125°C. Non-repetitive peak forward surge current reaches 50A for 8.3ms. Thermal resistance from junction to ambient is 62.5°C/W, operating temperature ranges from -55°C to +150°C, and total capacitance is 17pF.
Verify the specific ordering suffix matches the required packaging configuration before purchase. Confirm that the component meets all applicable environmental compliance standards relevant to your manufacturing region. Ensure proper handling procedures are followed during assembly to maintain the integrity of the glass passivated junction and surface mount terminals.
Select this component when a 1000V rating is required for AC to DC conversion in compact designs. Evaluate thermal management requirements based on the specified junction-to-ambient thermal resistance. Consider the SOPA-4 footprint constraints and verify compatibility with standard surface mount reflow soldering profiles used in your production line.
This part belongs to the ABS series of surface mount bridge rectifiers from Diodes Incorporated. It utilizes the SOPA-4 package format designed for automated surface mount technology assembly. The product line focuses on providing reliable rectification solutions for general purpose electronic applications requiring moderate current handling capabilities.
ABS10A-13 (600V), ABS10C-13 (1500V)
The maximum non-repetitive peak forward surge current is 50A for an 8.3ms single half sine-wave superimposed on rated load.
Leakage current increases with temperature, measuring 5μA at 25°C and rising to 500μA at 125°C under a 1,000V reverse voltage condition.
The typical total capacitance per element is 17pF, measured at 4V reverse voltage and 1.0MHz frequency.
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