AC3M0075120D

$4.22

Description：SIC MOSFET N-CH 1200V 33A TO247-
Series：SIC MOSFET-D
Mfr：APSEMI
Package：Tube

SKU:1dedd3c6f1b8 Category: Single FETs, MOSFETs Brand: APSEMI

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Product introduction

AC3M0075120D is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists APSEMI. Its product description is SIC MOSFET N-CH 1200V 33A TO247-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AC3M0075120D

Description：SIC MOSFET N-CH 1200V 33A TO247-
Series：SIC MOSFET-D
Mfr：APSEMI
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：33A
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：95mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：136W
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AC3M0075120D

AC3M0075120D

Single FETs, MOSFETs Overview

The AC3M0075120D is an N-Channel Enhancement Mode Silicon Carbide Power MOSFET manufactured by APSemi. It features a maximum drain-source voltage of 1200 V and a typical on-state resistance of 75 mΩ at 25°C. The device supports a continuous drain current of 33 A and a pulsed drain current of 85 A. It operates within a junction temperature range of -40°C to +175°C and utilizes a TO-247-3 package with Pb-free lead plating.

Single FETs, MOSFETs Feature Summary

Fast switching speed for high-frequency operation
Low on-resistance to minimize conduction losses
Fast reverse recovery characteristics in the intrinsic body diode
Simple gate drive requirements

Single FETs, MOSFETs Applications

Induction heating systems
Switch mode power supplies
DC/DC converters
Solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific revision level, identified as Rev. B dated December 2021, against your design requirements. Confirm that the TO-247-3 through-hole package dimensions match your PCB layout. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under your expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high-voltage handling up to 1200 V combined with low conduction losses. The SiC technology offers superior performance compared to silicon devices in high-temperature environments. Consider the internal gate resistance and total gate charge parameters when designing the driver circuitry to optimize switching transitions.

Single FETs, MOSFETs Part Context

This part belongs to the family of Silicon Carbide Power MOSFETs produced by APSemi. These components are engineered to replace traditional silicon IGBTs or MOSFETs in applications demanding higher efficiency and reduced system size. The TO-247-3 packaging facilitates robust mounting and effective heat dissipation for industrial power electronics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference pinouts and electrical ratings carefully if substituting other 1200V SiC MOSFETs in the TO-247-3 package. Verify that alternative devices meet the same thermal resistance and switching energy specifications to maintain system performance integrity.