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AD648KR is listed in the Instrumentation, Op Amps, Buffer Amps range at ChipApex. The manufacturer field lists Analog Devices Inc.. Its product description is IC OPAMP BIFET 1MHZ DUAL 8SOIC. Review the specifications below when checking this part for your BOM.
The AD648KR is a dual precision, low power BiFET operational amplifier manufactured by Analog Devices Inc. It features a maximum quiescent current of 400 µA and a maximum input bias current of 10 pA when warmed up. The device offers a typical unity gain bandwidth of 1 MHz and a slew rate of 1.8 V/µs. Input offset voltage is guaranteed at a maximum of 1.0 mV with a drift of 10 µV/°C. It operates within a supply range of ±4.5 V to ±18 V and is rated for the commercial temperature range of 0°C to 70°C.
Verify that the specific ordering suffix KR corresponds to the SOIC package and commercial temperature grade (0°C to 70°C) as defined in the official specifications. Confirm that procurement channels provide genuine components from Analog Devices Inc. or authorized distributors to ensure adherence to the published electrical limits and reliability standards.
Select this component for designs requiring high DC precision combined with low power consumption. The AD648KR is suitable where low input bias current is critical for maintaining accuracy in high-impedance circuits. Ensure the application environment remains within the specified commercial temperature range and that layout practices minimize parasitic leakage currents on the PCB.
The AD648 series consists of matched pairs of low power, precision monolithic operational amplifiers fabricated using ion-implanted FET and laser wafer trimming technologies. The K grade specifically denotes performance optimized for the commercial temperature range. This family provides an economical solution for applications demanding excellent DC and AC performance without excessive power drain.
The AD648KR is pin-compatible with industry standard dual op amps including the LF442, TL062, and AD642. Designers may substitute these parts to improve performance or achieve significant reductions in power dissipation while maintaining the same footprint and connection diagram.
Input bias current is guaranteed over the entire common-mode voltage range, with a maximum specification of 10 pA after a five-minute warm-up period at 25°C.
For temperatures above 25°C, the input bias current doubles for every 10°C rise in chip temperature, which can become noticeable under heavy output loading conditions.
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