ADC3D10065I

Overview

The ADC3D10065I is a 650-V wide bandgap diode manufactured by Analog Power Inc. It features a TO-220F-2L package with a maximum average forward current of 10 A and a peak repetitive reverse voltage of 650 V. The device exhibits a typical forward voltage of 1.8 V at 10 A and a junction capacitance of 6.3 pF at 200 V. Thermal resistance from junction to case is rated at 7.4 °C/W, supporting operation within a temperature range of -40°C to 175°C.

Feature Summary

• Utilizes silicon carbide performance characteristics for high-temperature stability
• Designed for easy paralleling in power applications
• Features very low junction capacitance for reduced switching losses

Applications

• Soft switching topologies
• Secondary side rectification

Procurement Notes

Verify the specific datasheet revision DS_ADC3D10065I_1A when sourcing components. Confirm that the TO-220F-2L package dimensions align with your PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance ratings under actual operating conditions.

Selection Notes

Select this component for applications requiring high-voltage blocking capabilities combined with low reverse recovery charge. Evaluate the thermal environment to ensure the junction temperature remains within the specified -40°C to 175°C range during continuous operation.

Part Context

This part belongs to the Analog Power wide bandgap diode series, designed to replace traditional silicon diodes in high-efficiency power conversion systems. The technology focuses on reducing switching losses and improving thermal performance compared to standard silicon alternatives.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.