ADC6D10065E

$3.98

Description：DIODE SIL CARB 650V 35A TO2522
Series：WBG
Mfr：Analog Power Inc.
Package：Tape & Reel (TR)

SKU:1b345f370bc8 Category: Single Diodes Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 650V 35A TO2522
Series：WBG
Mfr：Analog Power Inc.
Package：Tape & Reel (TR)
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：35A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 2 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：2 µA @ 650 V
Capacitance @ Vr, F：6.3pF @ 0V, 100kHz
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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ADC6D10065E

Overview

The ADC6D10065E is a 650-V wide bandgap diode manufactured by Analog Power Inc. It features an average forward current of 10 A and a single pulse forward current of 50 A at 25°C case temperature. The device exhibits a typical forward voltage of 1.8 V at 10 A. Key dynamic parameters include a reverse recovery time ranging from 30 ns to 76 ns and a junction capacitance of 6.3 pF at 200 V reverse bias. Thermal resistance ratings are 3 °C/W junction-to-case and 40 °C/W junction-to-ambient.

Feature Summary

Utilizes silicon carbide performance characteristics for high-temperature stability
Designed for easy paralleling with highly stable forward voltage and reverse recovery charge
Features very low junction capacitance suitable for high-frequency switching applications

Applications

Soft switching topologies
Secondary side rectification

Procurement Notes

Verify the specific datasheet revision, as the provided documentation is marked preliminary. Confirm that the TO-252-2L package dimensions align with your PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance under actual operating conditions rather than idealized test environments.

Selection Notes

Select this component when designing circuits requiring high-voltage blocking capabilities combined with fast switching speeds. The low junction capacitance makes it suitable for high-frequency power conversion stages. Evaluate the thermal derating curves to ensure the average forward current remains within limits across the expected operating temperature range.

Part Context

This component belongs to the Analog Power wide bandgap diode series. It is engineered to replace traditional silicon counterparts in high-efficiency power supplies. The device integrates robust avalanche characteristics and is intended for industrial and consumer power electronics demanding reduced switching losses.