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Product Detailed Parameters
- Description:DIODE SIL CARB 650V 36A TO2632
- Series:WBG
- Mfr:Analog Power Inc.
- Package:Tape & Reel (TR)
- Technology:SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):650 V
- Current - Average Rectified (Io):36A
- Voltage - Forward (Vf) (Max) @ If:1.8 V @ 2 A
- Speed:No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):-
- Current - Reverse Leakage @ Vr:2 µA @ 650 V
- Capacitance @ Vr, F:6.3pF @ 0V, 100kHz
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package:TO-263-2
- Operating Temperature - Junction:-55°C ~ 175°C
- Grade:-
- Qualification:-
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Overview
The ADC6D10065G is a 650-V wide bandgap diode in a TO-263 package. It supports an average forward current of 10 A and a single pulse current of 50 A at 25°C case temperature. The device features a maximum forward voltage of 1.8 V at 10 A. Thermal resistance from junction to case is 3.7 °C/W, with a maximum junction-to-ambient resistance of 40 °C/W on a standard board. Operating junction temperature ranges from -40°C to 175°C, and storage temperature spans -55°C to 175°C.
Feature Summary
- Utilizes silicon carbide performance characteristics for high-temperature stability.
- Designed for easy paralleling due to highly stable forward voltage and reverse recovery charge.
- Features very low junction capacitance suitable for high-frequency switching applications.
Applications
- Soft switching topologies
- Secondary side rectification
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical tolerances and packaging specifications. Confirm that the component meets all required thermal management constraints for the intended application environment before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring high-voltage blocking capability and robust thermal performance. Ensure the circuit design accommodates the specified peak reverse recovery current and junction temperature limits. Validate thermal dissipation requirements against the provided derating curves for accurate power handling assessment.
Part Context
This component belongs to Analog Power's wide bandgap diode portfolio, specifically engineered for high-efficiency power conversion systems. The device leverages silicon carbide technology to deliver superior switching performance compared to traditional silicon alternatives, targeting modern high-density power supply architectures.
Replacement Considerations
No public confirmed substitute part numbers are available in the source material.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
Does the device support paralleling?
Yes, the device is designed for easy paralleling due to its stable forward voltage and reverse recovery characteristics.
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