ADN4655BRWZ-RL7

Overview

The ADN4655BRWZ-RL7 is a dual-channel LVDS digital isolator from Analog Devices, utilizing magnetic coupling technology. It provides 5000 Vrms isolation voltage and supports data rates up to 1.25 Gbps. The device features a common mode transient immunity of 25 kV/µs and operates within a temperature range of -40°C to +125°C. Packaged in a 20-SOIC (0.295", 7.50mm wide) housing, it is supplied in tape and reel format with a factory pack quantity of 400 units.

Feature Summary

• Provides high-speed differential signaling isolation via LVDS interface
• Ensures signal integrity through high common mode transient immunity
• Supports bidirectional or unidirectional channel configurations

Applications

• High-speed industrial communication interfaces
• Medical equipment requiring galvanic isolation
• Power electronics control circuits

Procurement Notes

Verify the specific suffix RL7 indicates tape and reel packaging when ordering. Confirm the BRWZ variant corresponds to the 20-SOIC package width. Check current availability status as supply may be limited. Ensure compatibility with existing LVDS driver and receiver requirements for the target application design.

Selection Notes

Select this component for applications demanding high data throughput with robust noise immunity. The 5000 Vrms rating suits systems requiring strong galvanic separation. Consider the SOIC-20 footprint for PCB layout constraints. Evaluate power consumption against system thermal limits given the operating current specifications.

Part Context

This part belongs to the ADN465x series of gigabit LVDS isolators. It shares architectural similarities with the ADN4654 and ADN4656 models but offers specific performance characteristics tailored for high-speed data transmission. The series utilizes iCoupler technology for compact, reliable isolation solutions.

Replacement Considerations

The ADN4655BRSZ-RL7 serves as a direct substitute offering identical functionality in an SSOP-20 package. Verify pinout compatibility and thermal dissipation differences between the SOIC and SSOP packages before substitution.