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ADPA1113AEJZ is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Analog Devices Inc.. Its product description is 2-6 GHz,40W,GaN Radar PA. Review the specifications below when checking this part for your BOM.
The ADPA1113AEJZ is a Gallium Nitride (GaN) broadband power amplifier manufactured by Analog Devices Inc. It operates within a frequency range of 2 GHz to 6 GHz, delivering an output power of 40 W (46 dBm). The device provides a typical gain of 39 dB and achieves a power added efficiency of 39%. Designed for robust performance in demanding environments, it utilizes a 14-pin LDCC package.
Verify component authenticity through authorized Analog Devices distributors or direct channels. Confirm that the received part matches the specific ADPA1113AEJZ designation and package type. Ensure storage and handling procedures comply with electrostatic discharge precautions required for sensitive RF integrated circuits prior to installation.
Select this component when a wide bandwidth covering 2 GHz to 6 GHz is required alongside high output power capabilities. The integrated nature of the amplifier simplifies circuit design by removing the need for external matching and coupling elements. Consider thermal management requirements due to the high power dissipation inherent in GaN devices operating at these frequencies.
This part belongs to the ADPA1113 series of GaN power amplifiers from Analog Devices. It is engineered specifically for high-performance radar and electronic warfare applications where broad bandwidth and high linearity are critical. The series represents a move towards highly integrated solutions that reduce board space and complexity compared to discrete amplifier designs.
No public confirmed substitute part numbers are available in the provided documentation. Engineers should consult official Analog Devices resources for potential cross-references or newer generation replacements that meet identical electrical specifications.
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