ADPA7005AEHZ-R7

RF Amplifiers Overview

The ADPA7005AEHZ-R7 is a monolithic microwave integrated circuit (MMIC) power amplifier manufactured by Analog Devices Inc. utilizing GaAs pHEMT technology. It operates within the frequency range of 18 GHz to 44 GHz and is housed in an 18-terminal ceramic leadless chip carrier with heat sink package (LCC-HS-18). The device provides a typical gain of 15.5 dB and a noise figure of 11 dB. Key performance metrics include a P1dB compression point of 29 dBm and a maximum output power capability exceeding 1 W (32 dBm). It functions on a 5 V supply with a current draw of 1.4 A, supporting an operating temperature range from -40°C to +85°C.

RF Amplifiers Feature Summary

• Integrates GaAs and pHEMT technology for high power efficiency and exceptional output performance in a compact MMIC form factor.

RF Amplifiers Applications

• Point-to-point radio systems
• Satellite communication terminals
• Electronic warfare subsystems

RF Amplifiers Procurement Notes

Verify the specific suffix R7 indicates reel packaging when sourcing components. Confirm that the LCC-HS-18 package requires appropriate thermal management solutions due to the 12.33 W power dissipation rating. Ensure compatibility with the 18 GHz to 44 GHz operational bandwidth for the intended system design. Cross-reference the manufacturer part number ADPA7005AEHZ-R7 against official Analog Devices documentation to validate revision levels and electrical specifications before integration.

RF Amplifiers Selection Notes

Select this component for applications requiring high linearity and power output in the Ka-band spectrum. The 15.5 dB gain and 11 dB noise figure make it suitable for intermediate stages in RF chains. Consider the 5 V supply requirement and 1.4 A current consumption during power budget planning. The ceramic package with heat sink necessitates careful PCB layout for thermal dissipation and impedance matching at frequencies up to 44 GHz.

RF Amplifiers Part Context

This part belongs to the ADPA7005 series of wideband MMIC power amplifiers. It is designed for robust performance in demanding RF environments. The use of GaAs pHEMT technology ensures reliability across the specified industrial temperature range. The device represents a solution for integrating high-power amplification into space-constrained wireless infrastructure.

RF Amplifiers Replacement Considerations

Consult Analog Devices documentation for direct pin-compatible or functionally equivalent alternatives within the same product family. Verify that any substitute maintains the 18-44 GHz frequency range and similar power handling capabilities.